23,558 research outputs found

    The Mass of the Convective Zone in FGK Main Sequence Stars and the Effect of Accreted Planetary Material on Apparent Metallicity Determinations

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    The mass of the outer convective zone in FGK main sequence stars decreases dramatically with stellar mass. Therefore, any contamination of a star's atmosphere by accreted planetary material should affect hotter stars much more than cool stars. If recent suggestions that high metal abundances in stars with planets are caused by planetesimal accretion are correct, then metallicity enhancements in earlier-type stars with planets should be very pronounced. No such trend is seen, however.Comment: Submitted ApJ Letters March 26th; accepted April 30th. 12 pages, 2 figure

    Improved self-gain in deep submicrometer strained silicon-germanium pMOSFETs with HfSiOx/TiSiN gate stacks

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    The self-gain of surface channel compressively strained SiGe pMOSFETs with HfSiOx/TiSiN gate stacks is investigated for a range of gate lengths down to 55 nm. There is 125% and 700% enhancement in the self-gain of SiGe pMOSFETs compared with the Si control at 100 nm and 55 nm lithographic gate lengths, respectively. This improvement in the self-gain of the SiGe devices is due to 80% hole mobility enhancement compared with the Si control and improved electrostatic integrity in the SiGe devices due to less boron diffusion into the channel. At 55 nm gate length, the SiGe pMOSFETs show 50% less drain induced barrier lowering compared with the Si control devices. Electrical measurements show that the SiGe devices have larger effective channel lengths. It is shown that the enhancement in the self-gain of the SiGe devices compared with the Si control increases as the gate length is reduced thereby making SiGe pMOSFETs with HfSiOx/TiSiN gate stacks an excellent candidate for analog/mixed-signal applications

    vbyCaHbeta CCD Photometry of Clusters. VIII. The Super-Metal Rich, Old Open Cluster NGC 6791

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    CCD photometry on the intermediate-band vbyCaHbeta system is presented for the metal-rich, old open cluster, NGC 6791. Preliminary analysis led to [Fe/H] above +0.4 with an anomalously high reddening and an age below 5 Gyr. A revised calibration between (b-y)_0 and [Fe/H] at a given temperature shows that the traditional color-metallicity relations underestimate the color of the turnoff stars at high metallicity. With the revised relation, the metallicity from hk and the reddening for NGC 6791 become [Fe/H] = +0.45 +/- 0.04 and E(b-y) = 0.113 +/- 0.012 or E(B-V) = 0.155 +/- 0.016. Using the same technique, reanalysis of the photometry for NGC 6253 produces [Fe/H] = +0.58 +/-0.04 and E(b-y) = 0.120 +/- 0.018 or E(B-V) = 0.160 +/- 0.025. The errors quoted include both the internal and external errors. For NGC 6791, the metallicity from m_1 is a factor of two below that from hk, a result that may be coupled to the consistently low metal abundance from DDO photometry of the cluster and the C-deficiency found from high dispersion spectroscopy. E(B-V) is the same value predicted from Galactic reddening maps. With E(B-V) = 0.15 and [Fe/H] = +0.45, the available isochrones predict an age of 7.0 +/- 1.0 Gyr and an apparent modulus of (m-M) = 13.60 +/- 0.15, with the dominant source of the uncertainty arising from inconsistencies among the isochrones. The reanalysis of NGC 6253 with the revised lower reddening confirms that on both the hk and m_1 metallicity scales, NGC 6253, while less than half the age of NGC 6791, remains at least as metal-rich as NGC 6791, if not richer.Comment: Accepted for Astronomical Journal. 42 p. latex file includes 11 figures and 3 tables, one of which is a short version of a data table to appear in online AJ in its entiret

    Effect of simulated forward airspeed on small-scale-model externally blown flap noise

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    Noise tests were conducted on a small-scale model of an externally blown flap lift augmentation system. The nozzle/wing model was subjected to external flow that simulated takeoff and landing flight velocities by placing it in a 33-centimeter-diameter free jet. The results showed that external flow attenuated the noise associated with the various configurations tested. The amount of attenuation depended on flap setting. More attenuation occurred with a trailing-flap setting of 20 deg than with one of 60 deg. Noise varied with relative velocity as a function of the trailing-flap setting and the angle from the nozzle inlet

    Noise produced by a small-scale, externally blown flap

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    Noise data were obtained with a model of an externally blown flap of the type that is currently being considered for STOL aircraft. The noise caused by impingement of the jet on the flap is much louder than the nozzle jet noise. It is especially so directly below the wing. The noise level increases as the jet velocity and flap angle are increased. The sound power level increased with the sixth power of velocity. Several physical variations to the STOL model configuration were also tested. Two such variations, a large board and a slotless curved plate wing, had the same power spectra density (Strouhal number curve) as the model

    A hierarchy of compatibility and comeasurability levels in quantum logics with unique conditional probabilities

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    In the quantum mechanical Hilbert space formalism, the probabilistic interpretation is a later ad-hoc add-on, more or less enforced by the experimental evidence, but not motivated by the mathematical model itself. A model involving a clear probabilistic interpretation from the very beginning is provided by the quantum logics with unique conditional probabilities. It includes the projection lattices in von Neumann algebras and here probability conditionalization becomes identical with the state transition of the Lueders - von Neumann measurement process. This motivates the definition of a hierarchy of five compatibility and comeasurability levels in the abstract setting of the quantum logics with unique conditional probabilities. Their meanings are: the absence of quantum interference or influence, the existence of a joint distribution, simultaneous measurability, and the independence of the final state after two successive measurements from the sequential order of these two measurements. A further level means that two elements of the quantum logic (events) belong to the same Boolean subalgebra. In the general case, the five compatibility and comeasurability levels appear to differ, but they all coincide in the common Hilbert space formalism of quantum mechanics, in von Neumann algebras, and in some other cases.Comment: 12 page

    Conditional expectations associated with quantum states

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    An extension of the conditional expectations (those under a given subalgebra of events and not the simple ones under a single event) from the classical to the quantum case is presented. In the classical case, the conditional expectations always exist; in the quantum case, however, they exist only if a certain weak compatibility criterion is satisfied. This compatibility criterion was introduced among others in a recent paper by the author. Then, state-independent conditional expectations and quantum Markov processes are studied. A classical Markov process is a probability measure, together with a system of random variables, satisfying the Markov property and can equivalently be described by a system of Markovian kernels (often forming a semigroup). This equivalence is partly extended to quantum probabilities. It is shown that a dynamical (semi)group can be derived from a given system of quantum observables satisfying the Markov property, and the group generators are studied. The results are presented in the framework of Jordan operator algebras, and a very general type of observables (including the usual real-valued observables or self-adjoint operators) is considered.Comment: 10 pages, the original publication is available at http://www.aip.or

    Gamma-Ray Burst Sequences in Hardness Ratio-Peak Energy Plane

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    The narrowness of the distribution of the peak energy of νFν\nu F_{\nu} spectrum of gamma-ray bursts (GRBs) and the unification of GRB population are great puzzles yet to be solved. We investigate the two puzzles based on the global spectral behaviors of different GRB population in the HREpHR-E_{\rm{p}} plane (HR the spectral hardness ratio) with BATSE and HETE-2 observations. It is found that long GRBs and XRFs observed by HETE-2 seem to follow the same sequence in the HREpHR-E_{\rm{p}} plane, with the XRFs at the low end of this sequence. The long and short GRBs observed by BATSE follow significantly different sequences in the HREpHR-E_{\rm p} plane, with most of the short GRBs having a larger hardness ratio than the long GRBs at a given EpE_{\rm{p}}. These results indicate that the global spectral behaviors of the long GRB sample and the XRF sample are similar, while that of short GRBs is different. The short GRBs seem to be a unique subclass of GRBs, and they are not the higher energy extension of the long GRBs (abridged).Comment: 9 pages, 3 figure

    The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs

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    The impact of the thickness of the silicon–germanium strain-relaxed buffer (SiGe SRB) on the analog performance of strained Si nMOSFETs is investigated. The negative drain conductance caused by self-heating at high power levels leads to negative self-gain which can cause anomalous circuit behavior like non-linear phase shifts. Using AC and DC measurements, it is shown that reducing the SRB thickness improves the analog design space and performance by minimizing self-heating. The range of terminal voltages that leverage positive self-gain in 0.1 μm strained Si MOSFETs fabricated on 425 nm SiGe SRBs is increased by over 100% compared with strained Si devices fabricated on conventional SiGe SRBs 4 μm thick. Strained Si nMOSFETs fabricated on thin SiGe SRBs also show 45% improvement in the self-gain compared with the Si control as well as 25% enhancement in the on-state performance compared with the strained Si nMOSFETs on the 4 μm SiGe SRB. The extracted thermal resistance is 50% lower in the strained Si device on the thin SiGe SRB corresponding to a 30% reduction in the temperature rise compared with the device fabricated on the 4 μm SiGe SRB. Comparisons between the maximum drain voltages for positive self-gain in the strained Si devices and the ITRS projections of supply-voltage scaling show that reducing the thickness of the SiGe SRB would be necessary for future technology nodes

    Einstein-Podolsky-Rosen correlations via dissociation of a molecular Bose-Einstein condensate

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    Recent experimental measurements of atomic intensity correlations through atom shot noise suggest that atomic quadrature phase correlations may soon be measured with a similar precision. We propose a test of local realism with mesoscopic numbers of massive particles based on such measurements. Using dissociation of a Bose-Einstein condensate of diatomic molecules into bosonic atoms, we demonstrate that strongly entangled atomic beams may be produced which possess Einstein-Podolsky-Rosen (EPR) correlations in field quadratures, in direct analogy to the position and momentum correlations originally considered by EPR.Comment: Final published version (corrections in Ref. [32], updated references
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